T
Texas Instruments
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 Texas Instruments | Integrated Circuits (ICs) | BUS DRIVER, BCT/FBT SERIES |
 Texas Instruments | Integrated Circuits (ICs) | 12BIT 3.3V~3.6V 210MHZ PARALLEL VQFN-48-EP(7X7) ANALOG TO DIGITAL CONVERTERS (ADC) ROHS |
Texas Instruments | Integrated Circuits (ICs) | TMX320DRE311 179PIN UBGA 200MHZ |
 Texas Instruments TPS61040DRVTG4Unknown | Integrated Circuits (ICs) | IC LED DRV RGLTR PWM 350MA 6WSON |
 Texas Instruments LP3876ET-2.5Obsolete | Integrated Circuits (ICs) | IC REG LINEAR 2.5V 3A TO220-5 |
 Texas Instruments LMS1585ACSX-ADJObsolete | Integrated Circuits (ICs) | IC REG LIN POS ADJ 5A DDPAK |
 Texas Instruments INA111APG4Obsolete | Integrated Circuits (ICs) | IC INST AMP 1 CIRCUIT 8DIP |
 Texas Instruments | Integrated Circuits (ICs) | AUTOMOTIVE, QUAD 36V 1.2MHZ OPERATIONAL AMPLIFIER |
 Texas Instruments OPA340NA/3KG4Unknown | Integrated Circuits (ICs) | IC OPAMP GP 1 CIRCUIT SOT23-5 |
 Texas Instruments PT5112AObsolete | Power Supplies - Board Mount | DC DC CONVERTER 8V 8W |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
CSD25310Q2-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm | Single FETs, MOSFETs | 2 | Active | This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.
This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations. |
| FETs, MOSFETs | 1 | Obsolete | ||
CSD25402Q3A-20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm | Transistors | 1 | Active | This -20-V, 7.7-mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
This -20-V, 7.7-mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device. |
CSD25404Q3-20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.5 mOhm | Transistors | 2 | Active | This -20 V, 5.5 mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
This -20 V, 5.5 mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device. |
CSD25480F3-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection | Single FETs, MOSFETs | 1 | Active | This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. |
CSD25481F4-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection | FETs, MOSFETs | 2 | Active | This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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CSD25483F4-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection | Single FETs, MOSFETs | 1 | Active | This 210-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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This 210-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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CSD25484F4-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection | Discrete Semiconductor Products | 2 | Active | This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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CSD25485F5-20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection | Transistors | 2 | Active | This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
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This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
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CSD25501F3-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection | Discrete Semiconductor Products | 1 | Active | This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V.
This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V. |
