CSD25480F3 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Texas Instruments CSD25480F3T	-55 °C	150 °C	-12 V	Surface Mount	1.8 V 8 V	P-Channel	155 pF	1.7 A	3-XFDFN	MOSFET (Metal Oxide)	132 mOhm	20 V	500 mW	1.2 V	0.91 nC	3-PICOSTAR

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection

Key Features

• Low on-resistanceUltra-low Qgand QgdUltra-small footprint0.73 mm × 0.64 mmLow profile0.36-mm max heightIntegrated ESD protection diodeLead and halogen freeRoHS compliantLow on-resistanceUltra-low Qgand QgdUltra-small footprint0.73 mm × 0.64 mmLow profile0.36-mm max heightIntegrated ESD protection diodeLead and halogen freeRoHS compliant

Description

This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.