CSD25484F4 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection

Part	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)
Texas Instruments CSD25484F4	1.2 V	P-Channel	-55 °C	150 °C	1.42 nC	1.8 V 8 V	Surface Mount	3-XFDFN	94 mOhm	500 mW	230 pF	MOSFET (Metal Oxide)	2.5 A	-12 V	3-PICOSTAR	20 V
Texas Instruments CSD25484F4T	1.2 V	P-Channel	-55 °C	150 °C	1.42 nC	1.8 V 8 V	Surface Mount	3-XFDFN	94 mOhm	500 mW	230 pF	MOSFET (Metal Oxide)	2.5 A	-12 V	3-PICOSTAR	20 V

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection

Key Features

• Low on-resistanceUltra-low Qgand QgdLow-threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profile0.2-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow on-resistanceUltra-low Qgand QgdLow-threshold voltageUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profile0.2-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . . This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . .