CSD25402Q3A Series

-20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm

Catalog

-20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD25402Q3A	12 V	1790 pF	-55 °C	150 °C	8-VSONP (3x3.3)	9.7 nC	1.8 V 4.5 V	Surface Mount	2.8 W 69 W	1.15 V	20 V	8.9 mOhm	8-PowerVDFN	MOSFET (Metal Oxide)	P-Channel	76 A

Catalog

-20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm

Key Features

• Ultra-Low Qgand QgdLow Thermal ResistanceLow RDS(on)Pb and Halogen FreeRoHS CompliantSON 3.3 mm × 3.3 mm Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceLow RDS(on)Pb and Halogen FreeRoHS CompliantSON 3.3 mm × 3.3 mm Plastic Package

Description

This -20-V, 7.7-mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device. This -20-V, 7.7-mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.