CSD25483F4 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max) [Max]	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case
Texas Instruments CSD25483F4T	1.8 V 4.5 V	Surface Mount	-12 V	198 pF	1.6 A	1.2 V	P-Channel	500 mW	MOSFET (Metal Oxide)	20 V	205 mOhm	-55 °C	150 °C	0.96 nC	3-PICOSTAR	3-XFDFN

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection

Key Features

• Ultra-low on-resistanceUltra-low Qgand QgdHigh operating drain currentUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profileMaximum height: 0.36-mmIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantUltra-low on-resistanceUltra-low Qgand QgdHigh operating drain currentUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profileMaximum height: 0.36-mmIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 210-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . . This 210-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . .