CSD25404Q3 Series

-20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.5 mOhm

Catalog

-20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.5 mOhm

Part	Mounting Type	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD25404Q3	Surface Mount	MOSFET (Metal Oxide)	12 V	6.5 mOhm	8-VSONP (3x3.3)	20 V	1.15 V	1.8 V 4.5 V	2120 pF	14.1 nC	104 A	8-PowerVDFN	P-Channel	-55 °C	150 °C
Texas Instruments CSD25404Q3T	Surface Mount	MOSFET (Metal Oxide)	12 V	6.5 mOhm	8-VSONP (3x3.3)	20 V	1.15 V	1.8 V 4.5 V	2120 pF	14.1 nC	104 A	8-PowerVDFN	P-Channel	-55 °C	150 °C

Catalog

-20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.5 mOhm

Key Features

• Ultra-Low Qgand QgdLow Thermal ResistanceLow RDS(on)Halogen FreeRoHS CompliantPb Free Terminal PlatingSON 3.3 mm × 3.3 mm Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceLow RDS(on)Halogen FreeRoHS CompliantPb Free Terminal PlatingSON 3.3 mm × 3.3 mm Plastic Package

Description

This -20 V, 5.5 mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device. This -20 V, 5.5 mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.