| Power Distribution Switches, Load Drivers | 1 | Active | The CSD43301Q5M NexFET Smart Synchronous Rectifier is a highly optimized design for secondary synchronous rectification in a high power high density DC/DC converter. This product integrates the driver IC and an ultra low RonPower MOSFET to complete the synchronous rectification function. In addition, the PCB footprint has been optimized to help reduce design time and simplify the completion of the overall system design.
The CSD43301Q5M NexFET Smart Synchronous Rectifier is a highly optimized design for secondary synchronous rectification in a high power high density DC/DC converter. This product integrates the driver IC and an ultra low RonPower MOSFET to complete the synchronous rectification function. In addition, the PCB footprint has been optimized to help reduce design time and simplify the completion of the overall system design. |
| Discrete Semiconductor Products | 1 | Obsolete | |
CSD75208W1015-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1 mm x 1.5 mm, 108 mOhm, gate ESD prot | Discrete Semiconductor Products | 2 | Active | This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. |
| Transistors | 1 | Obsolete | |
CSD83325L12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection | FET, MOSFET Arrays | 2 | Active | This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices. |
CSD85301Q220-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection | FETs, MOSFETs | 1 | Active | The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.
The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications. |
CSD85302L20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro | FETs, MOSFETs | 1 | Active | This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.
This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices. |
CSD85312Q3E20-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3, 14 mOhm | Discrete Semiconductor Products | 1 | Active | The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications. |
CSD86311W172325-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm | Discrete Semiconductor Products | 1 | Active | The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications |
| Development Boards, Kits, Programmers | 1 | Obsolete | |
