CSD25310Q2 Series

-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm

Catalog

-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Texas Instruments CSD25310Q2T	20 V	1.1 V	8 V	MOSFET (Metal Oxide)	2.9 W	20 A	Surface Mount	23.9 mOhm	655 pF	1.8 V 4.5 V	P-Channel	6-WSON (2x2)	-55 °C	150 °C	4.7 nC
Texas Instruments CSD25310Q2	20 V	1.1 V	8 V	MOSFET (Metal Oxide)	2.9 W	20 A	Surface Mount	23.9 mOhm	655 pF	1.8 V 4.5 V	P-Channel	6-WSON (2x2)	-55 °C	150 °C	4.7 nC

Catalog

-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm

Key Features

• Ultra-low Qg and QgdLow on resistanceLow thermal resistancePb-freeRoHS compliantHalogen freeSON 2mm × 2mm plastic packageUltra-low Qg and QgdLow on resistanceLow thermal resistancePb-freeRoHS compliantHalogen freeSON 2mm × 2mm plastic package

Description

This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations. This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.