CSD25481F4 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection

Part	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Texas Instruments CSD25481F4T	88 mOhm	3-XFDFN	0.91 nC	P-Channel	-55 °C	150 °C	1.2 V	MOSFET (Metal Oxide)	500 mW	1.8 V 4.5 V	189 pF	3-PICOSTAR	Surface Mount	2.5 A	-12 V	20 V
Texas Instruments CSD25481F4	88 mOhm	3-XFDFN		P-Channel	-55 °C	150 °C	1.2 V	MOSFET (Metal Oxide)	500 mW	1.8 V 4.5 V	189 pF	3-PICOSTAR	Surface Mount	2.5 A	-12 V	20 V	0.913 nC

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection

Key Features

• Ultra-low on resistanceUltra-low Qgand QgdHigh operating drain currentUltra-small footprint (0402 Case Size)1 mm × 0.6 mmUltra-low profile0.36 mm max heightIntegrated ESD protection diodeRated >4 kV HBMRated >2 kV CDMLead and halogen freeRoHS compliantUltra-low on resistanceUltra-low Qgand QgdHigh operating drain currentUltra-small footprint (0402 Case Size)1 mm × 0.6 mmUltra-low profile0.36 mm max heightIntegrated ESD protection diodeRated >4 kV HBMRated >2 kV CDMLead and halogen freeRoHS compliant

Description

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . .