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Texas Instruments

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(19791)

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Part	Category	Description
Texas Instruments SN64BCT29828BNT	Integrated Circuits (ICs)	BUS DRIVER, BCT/FBT SERIES
Texas Instruments ADS6128IRGZT	Integrated Circuits (ICs)	12BIT 3.3V~3.6V 210MHZ PARALLEL VQFN-48-EP(7X7) ANALOG TO DIGITAL CONVERTERS (ADC) ROHS
Texas Instruments TMS320DRE311PGE	Integrated Circuits (ICs)	TMX320DRE311 179PIN UBGA 200MHZ
Texas Instruments TPS61040DRVTG4Unknown	Integrated Circuits (ICs)	IC LED DRV RGLTR PWM 350MA 6WSON
Texas Instruments LP3876ET-2.5Obsolete	Integrated Circuits (ICs)	IC REG LINEAR 2.5V 3A TO220-5
Texas Instruments LMS1585ACSX-ADJObsolete	Integrated Circuits (ICs)	IC REG LIN POS ADJ 5A DDPAK
Texas Instruments INA111APG4Obsolete	Integrated Circuits (ICs)	IC INST AMP 1 CIRCUIT 8DIP
Texas Instruments LM2902BQPWRQ1	Integrated Circuits (ICs)	AUTOMOTIVE, QUAD 36V 1.2MHZ OPERATIONAL AMPLIFIER
Texas Instruments OPA340NA/3KG4Unknown	Integrated Circuits (ICs)	IC OPAMP GP 1 CIRCUIT SOT23-5
Texas Instruments PT5112AObsolete	Power Supplies - Board Mount	DC DC CONVERTER 8V 8W

Series	Category	# Parts	Status	Description

CSD19533KCS100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm	Single FETs, MOSFETs	1	Active	This 100V, 8.7mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 100V, 8.7mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
CSD19534Q5A100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm	Transistors	2	Active	This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications. This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
CSD19535KTT100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm	Discrete Semiconductor Products	1	Active	This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. ™ This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. ™
CSD19536KCS100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm	Discrete Semiconductor Products	1	Active	This 100V, 2.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 100V, 2.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
CSD19537Q3100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm	FETs, MOSFETs	2	Active	This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
CSD19538Q3A100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm	Single FETs, MOSFETs	5	Active	This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications. This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.
CSD22202W15-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection	FETs, MOSFETs	1	Active	The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
CSD22204W-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection	Single FETs, MOSFETs	2	Active	This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
CSD22205L-8V, P channel NexFET™ power MOSFET, single LGA 1.2 mm x 1.2 mm, 9.9 mOhm, gate ESD protection	Single FETs, MOSFETs	2	Active	This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls. This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.
CSD22206W-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection	Single FETs, MOSFETs	1	Active	This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.