CSD25485F5 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection

Part	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
Texas Instruments CSD25485F5T	Surface Mount	1.4 W	1.3 V	-55 °C	150 °C	533 pF	1.8 V 8 V	MOSFET (Metal Oxide)	P-Channel	5.3 A	-12 V	3-XFDFN	3-PICOSTAR	35 mOhm	20 V
Texas Instruments CSD25485F5	Surface Mount		1.3 V	-55 °C	150 °C	533 pF	1.8 V 8 V	MOSFET (Metal Oxide)	P-Channel	3.2 A	-12 V	3-XFDFN	3-PICOSTAR	35 mOhm	20 V	500 mW

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection

Key Features

• Low-on resistanceLow Qgand QgdUltra-small footprint1.53 mm × 0.77 mm0.50-mm pad pitchLow profile0.36-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow-on resistanceLow Qgand QgdUltra-small footprint1.53 mm × 0.77 mm0.50-mm pad pitchLow profile0.36-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . . . . . . This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . . . . . .