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Texas Instruments
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 Texas Instruments | Integrated Circuits (ICs) | BUS DRIVER, BCT/FBT SERIES |
 Texas Instruments | Integrated Circuits (ICs) | 12BIT 3.3V~3.6V 210MHZ PARALLEL VQFN-48-EP(7X7) ANALOG TO DIGITAL CONVERTERS (ADC) ROHS |
Texas Instruments | Integrated Circuits (ICs) | TMX320DRE311 179PIN UBGA 200MHZ |
 Texas Instruments TPS61040DRVTG4Unknown | Integrated Circuits (ICs) | IC LED DRV RGLTR PWM 350MA 6WSON |
 Texas Instruments LP3876ET-2.5Obsolete | Integrated Circuits (ICs) | IC REG LINEAR 2.5V 3A TO220-5 |
 Texas Instruments LMS1585ACSX-ADJObsolete | Integrated Circuits (ICs) | IC REG LIN POS ADJ 5A DDPAK |
 Texas Instruments INA111APG4Obsolete | Integrated Circuits (ICs) | IC INST AMP 1 CIRCUIT 8DIP |
 Texas Instruments | Integrated Circuits (ICs) | AUTOMOTIVE, QUAD 36V 1.2MHZ OPERATIONAL AMPLIFIER |
 Texas Instruments OPA340NA/3KG4Unknown | Integrated Circuits (ICs) | IC OPAMP GP 1 CIRCUIT SOT23-5 |
 Texas Instruments PT5112AObsolete | Power Supplies - Board Mount | DC DC CONVERTER 8V 8W |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Single FETs, MOSFETs | 1 | Obsolete | ||
CSD23202W10-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection | FETs, MOSFETs | 1 | Active | This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile. |
CSD23203W-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection | Single FETs, MOSFETs | 2 | Active | This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. |
CSD23280F3-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection | Transistors | 2 | Active | This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. |
CSD23285F5-12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection | Transistors | 2 | Active | This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. |
CSD23381F4-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection | Transistors | 2 | Active | This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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CSD23382F4-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection | Transistors | 1 | Active | This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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| Transistors | 1 | Obsolete | ||
CSD25202W15-20-V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 26 mOhm, gate ESD protection | Discrete Semiconductor Products | 2 | Active | This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. |
CSD25304W1015-20-V, P channel NexFET™ power MOSFET single WLP 1 mm x 1.5 mm, 32.5 mOhm | Transistors | 2 | Active | This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. |
