CSD25501F3 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Part	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package [x]	Supplier Device Package [y]	Supplier Device Package
Texas Instruments CSD25501F3T	-20 V	385 pF	1.05 V	1.8 V 4.5 V	-55 °C	150 °C	76 mOhm	3.6 A	MOSFET (Metal Oxide)	500 mW	Surface Mount	3-XFLGA	P-Channel	1.33 nC	20 V	0.73	0.64	3-LGA

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Key Features

• Low on-resistanceUltra-low Qg and QgdUltra-small footprint0.7mm × 0.6mmLow profile0.22mm max heightIntegrated ESD protection diodeLead and halogen freeRoHS compliantLow on-resistanceUltra-low Qg and QgdUltra-small footprint0.7mm × 0.6mmLow profile0.22mm max heightIntegrated ESD protection diodeLead and halogen freeRoHS compliant

Description

This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V. This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V.