CSD23280F3 Series

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection

Catalog

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max) [Max]
Texas Instruments CSD23280F3T	MOSFET (Metal Oxide)	1.5 V 4.5 V	3-XFDFN	12 V	500 mW	950 mV	1.23 nC	234 pF	3-PICOSTAR	P-Channel	1.8 A	-55 °C	150 °C	Surface Mount	116 mOhm	-6 V
Texas Instruments CSD23280F3	MOSFET (Metal Oxide)	1.5 V 4.5 V	3-XFDFN	12 V	500 mW	950 mV	1.23 nC	234 pF	3-PICOSTAR	P-Channel	1.8 A	-55 °C	150 °C	Surface Mount	116 mOhm	-6 V

Catalog

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection

Key Features

• Low On-ResistanceUltra-Low Qgand QgdHigh-operating drain currentUltra-small footprint0.73 mm × 0.64 mmUltra-low profile0.36-mm max heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow On-ResistanceUltra-Low Qgand QgdHigh-operating drain currentUltra-small footprint0.73 mm × 0.64 mmUltra-low profile0.36-mm max heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.