CSD23202W10 Series

-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection

Catalog

-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection

Part	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD23202W10	-6 V	12 V	4-DSBGA (1x1)	3.8 nC	53 mOhm	4-UFBGA DSBGA	P-Channel	900 mV	1.5 V 4.5 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	1 W	2.2 A

Catalog

-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection

Key Features

• Ultra-Low Qgand QgdSmall Footprint 1 mm × 1 mmLow Profile 0.62-mm HeightPb FreeGate ESD Protection – 3 kVRoHS CompliantHalogen FreeUltra-Low Qgand QgdSmall Footprint 1 mm × 1 mmLow Profile 0.62-mm HeightPb FreeGate ESD Protection – 3 kVRoHS CompliantHalogen Free

Description

This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile. This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.