CSD25304W1015 Series

-20-V, P channel NexFET™ power MOSFET single WLP 1 mm x 1.5 mm, 32.5 mOhm

Catalog

-20-V, P channel NexFET™ power MOSFET single WLP 1 mm x 1.5 mm, 32.5 mOhm

Part	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Texas Instruments CSD25304W1015T	6-DSBGA (1x1.5)	8 V	1.8 V 4.5 V	3 A	Surface Mount	P-Channel	MOSFET (Metal Oxide)	750 mW	4.4 nC	-55 °C	150 °C	6-UFBGA DSBGA	1.15 V	595 pF	32.5 mOhm	20 V
Texas Instruments CSD25304W1015	6-DSBGA (1x1.5)	8 V	1.8 V 4.5 V	3 A	Surface Mount	P-Channel	MOSFET (Metal Oxide)	750 mW	4.4 nC	-55 °C	150 °C	6-UFBGA DSBGA	1.15 V	595 pF	32.5 mOhm	20 V

Catalog

-20-V, P channel NexFET™ power MOSFET single WLP 1 mm x 1.5 mm, 32.5 mOhm

Key Features

• Ultra-Low Qgand QgdSmall FootprintLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen FreeCSP 1 × 1.5 mm Wafer Level PackageUltra-Low Qgand QgdSmall FootprintLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen FreeCSP 1 × 1.5 mm Wafer Level Package

Description

This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.