CSD23203W Series

-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection

Catalog

-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Texas Instruments CSD23203WT	-55 °C	150 °C	1.8 V 4.5 V	19.4 mOhm	3 A	6-DSBGA (1x1.5)	6-UFBGA DSBGA	-6 V	Surface Mount	8 V	750 mW	P-Channel	MOSFET (Metal Oxide)	6.3 nC	914 pF	1.1 V
Texas Instruments CSD23203W	-55 °C	150 °C	1.8 V 4.5 V	19.4 mOhm	3 A	6-DSBGA (1x1.5)	6-UFBGA DSBGA	-6 V	Surface Mount	8 V	750 mW	P-Channel	MOSFET (Metal Oxide)	6.3 nC	914 pF	1.1 V

Catalog

-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection

Key Features

• Ultra-Low Qgand QgdLow RDS(on)Small FootprintLow Profile 0.62-mm HeightLead FreeRoHS CompliantHalogen FreeCSP 1-mm × 1.5-mm Wafer Level PackageUltra-Low Qgand QgdLow RDS(on)Small FootprintLow Profile 0.62-mm HeightLead FreeRoHS CompliantHalogen FreeCSP 1-mm × 1.5-mm Wafer Level Package

Description

This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.