CSD25202W15 Series

-20-V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 26 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 26 mOhm, gate ESD protection

Part	Package / Case	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Texas Instruments CSD25202W15	9-UFBGA DSBGA	-6 V	1010 pF	26 mOhm	P-Channel	20 V	MOSFET (Metal Oxide)	500 mW	1.05 V	-55 °C	150 °C	1.8 V 4.5 V	4 A	9-DSBGA	Surface Mount	7.5 nC
Texas Instruments CSD25202W15T	9-UFBGA DSBGA	-6 V	1010 pF	26 mOhm	P-Channel	20 V	MOSFET (Metal Oxide)	500 mW	1.05 V	-55 °C	150 °C	1.8 V 4.5 V	4 A	9-DSBGA	Surface Mount	7.5 nC

Catalog

-20-V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 26 mOhm, gate ESD protection

Key Features

• Low-ResistanceSmall Footprint 1.5 mm × 1.5 mmGate ESD Protection –3 kVPb FreeRoHS CompliantHalogen FreeGate-Source Voltage ClampLow-ResistanceSmall Footprint 1.5 mm × 1.5 mmGate ESD Protection –3 kVPb FreeRoHS CompliantHalogen FreeGate-Source Voltage Clamp

Description

This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.