CSD23381F4 Series

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection

Catalog

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Technology	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Texas Instruments CSD23381F4T	1.2 V	12 V	500 mW	Surface Mount	3-XFDFN	-55 °C	150 °C	2.3 A	P-Channel	3-PICOSTAR	MOSFET (Metal Oxide)	-8 V	236 pF	175 mOhm	1.14 nC	1.8 V 4.5 V
Texas Instruments CSD23381F4	1.2 V	12 V	500 mW	Surface Mount	3-XFDFN	-55 °C	150 °C	2.3 A	P-Channel	3-PICOSTAR	MOSFET (Metal Oxide)	-8 V	236 pF	175 mOhm		1.8 V 4.5 V	1.14 nC

Catalog

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection

Key Features

• Ultra-low on-resistanceUltra-low Qgand QgdHigh operating drain currentUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profileMaximum height: 0.36 mmIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantUltra-low on-resistanceUltra-low Qgand QgdHigh operating drain currentUltra-small footprint (0402 case size)1.0 mm × 0.6 mmUltra-low profileMaximum height: 0.36 mmIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . . This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . .