T
Texas Instruments
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
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⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 Texas Instruments | Integrated Circuits (ICs) | BUS DRIVER, BCT/FBT SERIES |
 Texas Instruments | Integrated Circuits (ICs) | 12BIT 3.3V~3.6V 210MHZ PARALLEL VQFN-48-EP(7X7) ANALOG TO DIGITAL CONVERTERS (ADC) ROHS |
Texas Instruments | Integrated Circuits (ICs) | TMX320DRE311 179PIN UBGA 200MHZ |
 Texas Instruments TPS61040DRVTG4Unknown | Integrated Circuits (ICs) | IC LED DRV RGLTR PWM 350MA 6WSON |
 Texas Instruments LP3876ET-2.5Obsolete | Integrated Circuits (ICs) | IC REG LINEAR 2.5V 3A TO220-5 |
 Texas Instruments LMS1585ACSX-ADJObsolete | Integrated Circuits (ICs) | IC REG LIN POS ADJ 5A DDPAK |
 Texas Instruments INA111APG4Obsolete | Integrated Circuits (ICs) | IC INST AMP 1 CIRCUIT 8DIP |
 Texas Instruments | Integrated Circuits (ICs) | AUTOMOTIVE, QUAD 36V 1.2MHZ OPERATIONAL AMPLIFIER |
 Texas Instruments OPA340NA/3KG4Unknown | Integrated Circuits (ICs) | IC OPAMP GP 1 CIRCUIT SOT23-5 |
 Texas Instruments PT5112AObsolete | Power Supplies - Board Mount | DC DC CONVERTER 8V 8W |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
CSD18541F560-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection | Transistors | 1 | Active | This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. |
CSD18542KTT60-V, N channel NexFET™ power MOSFET, single D2PAK, 4 mOhm | Single FETs, MOSFETs | 2 | Active | This 60V, 3.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 60V, 3.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. |
CSD18543Q3A60-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm | Discrete Semiconductor Products | 1 | Active | This 60-V, 8.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 60-V, 8.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. |
CSD18563Q5A60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.8 mOhm | Transistors | 2 | Active | This 5.7 mΩ, 60 V SON 5 mm × 6 mm NexFET power MOSFET was designed to pair with the CSD18537NQ5A control FET and act as the sync FET for a complete industrial buck converter chipset solution.
This 5.7 mΩ, 60 V SON 5 mm × 6 mm NexFET power MOSFET was designed to pair with the CSD18537NQ5A control FET and act as the sync FET for a complete industrial buck converter chipset solution. |
CSD19502Q5B80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm | Single FETs, MOSFETs | 1 | Active | This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. |
CSD19503KCS80-V, N channel NexFET™ power MOSFET, single TO-220, 9.2 mOhm | Transistors | 1 | Active | This 80V, 7.6mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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This 80V, 7.6mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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CSD19505KTT80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm | Transistors | 2 | Active | This 80-V, 2.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 80-V, 2.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. |
CSD19506KCS80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm | Single FETs, MOSFETs | 3 | Active | This 80-V, 2.0-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 80-V, 2.0-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. |
CSD19531Q5A100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm | Discrete Semiconductor Products | 3 | Active | This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
Typical RθJA= 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC= 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%
This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
Typical RθJA= 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC= 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1% |
CSD19532KTT100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm | Single FETs, MOSFETs | 2 | Active | This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. |
