CSD23285F5 Series

-12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection

Catalog

-12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection

Part	FET Type	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
Texas Instruments CSD23285F5	P-Channel	MOSFET (Metal Oxide)	35 mOhm	500 mW	Surface Mount	-6 V	628 pF	12 V	3-PICOSTAR	3-XFDFN	950 mV	5.4 A	-55 °C	150 °C	1.5 V 4.5 V
Texas Instruments CSD23285F5T	P-Channel	MOSFET (Metal Oxide)	35 mOhm	500 mW	Surface Mount	-6 V	628 pF	12 V	3-PICOSTAR	3-SMD No Lead	950 mV	5.4 A	-55 °C	150 °C	1.5 V 4.5 V

Catalog

-12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection

Key Features

• Low on-resistanceLow Qgand QgdUltra-small footprint1.53 mm × 0.77 mm0.50-mm pad pitchLow profile0.36-mm heightIntegrated ESD protection diodeRated > 4 kV HBMRated > 2 kV CDMLead and halogen freeRoHS compliantLow on-resistanceLow Qgand QgdUltra-small footprint1.53 mm × 0.77 mm0.50-mm pad pitchLow profile0.36-mm heightIntegrated ESD protection diodeRated > 4 kV HBMRated > 2 kV CDMLead and halogen freeRoHS compliant

Description

This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.