CSD23382F4 Series

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection

Catalog

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection

Part	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type
Texas Instruments CSD23382F4	500 mW	235 pF	3.5 A	MOSFET (Metal Oxide)	12 V	1.1 V	-55 °C	150 °C	Surface Mount	76 mOhm	3-XFDFN	1.8 V 4.5 V	3-PICOSTAR	1.35 nC	8 V	P-Channel

Catalog

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection

Key Features

• Low on-resistanceUltra-low Qgand QgdUltra-small footprint (0402 case size)1.0 mm × 0.6 mmLow profile0.36-mm maximum heightIntegrated ESD protection diodeRated > 2-kV HBMRated > 2-kV CDMPb terminal platingHalogen freeRoHS compliantLow on-resistanceUltra-low Qgand QgdUltra-small footprint (0402 case size)1.0 mm × 0.6 mmLow profile0.36-mm maximum heightIntegrated ESD protection diodeRated > 2-kV HBMRated > 2-kV CDMPb terminal platingHalogen freeRoHS compliant

Description

This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . .