CSD19538Q3A Series

100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm

Part	Vgs (Max)	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case
Texas Instruments CSD19538Q2	20 V	6-WSON (2x2)	Surface Mount	-55 °C	150 °C	3.8 V	100 V	6 V 10 V	5.6 nC	MOSFET (Metal Oxide)	N-Channel	59 mOhm
Texas Instruments CSD19538Q3A	20 V	8-VSONP (3x3.3)	Surface Mount	-55 °C	150 °C	3.8 V	100 V	6 V 10 V	4.3 nC	MOSFET (Metal Oxide)	N-Channel	59 mOhm	15 A	2.8 W 23 W	8-PowerVDFN
Texas Instruments CSD19538Q3AT	20 V	8-VSONP (3x3.3)	Surface Mount	-55 °C	150 °C	3.8 V	100 V	6 V 10 V	4.3 nC	MOSFET (Metal Oxide)	N-Channel	59 mOhm	15 A	2.8 W 23 W	8-PowerVDFN
Texas Instruments CSD19538Q2R
Texas Instruments CSD19538Q2T	20 V	6-WSON (2x2)	Surface Mount	-55 °C	150 °C	3.8 V	100 V	6 V 10 V	5.6 nC	MOSFET (Metal Oxide)	N-Channel	59 mOhm	13.1 A

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm

Key Features

• Ultra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead FreeRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageUltra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead FreeRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic Package

Description

This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications. This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.