CSD19537Q3 Series

100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD19537Q3T	N-Channel	50 A	2.8 W 83 W	3.6 V	1680 pF	MOSFET (Metal Oxide)	100 V	14.5 mOhm	20 V	Surface Mount	6 V 10 V	21 nC	8-VSON-CLIP (3.3x3.3)	8-PowerTDFN	-55 °C	150 °C
Texas Instruments CSD19537Q3	N-Channel	50 A	2.8 W 83 W	3.6 V	1680 pF	MOSFET (Metal Oxide)	100 V	14.5 mOhm	20 V	Surface Mount	6 V 10 V	21 nC	8-VSON-CLIP (3.3x3.3)	8-PowerTDFN	-55 °C	150 °C

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm

Key Features

• Ultra-low Qgand QgdLow thermal resistanceAvalanche ratedLead free terminal platingRoHS compliantHalogen freeSON 3.3-mm × 3.3-mm plastic packageUltra-low Qgand QgdLow thermal resistanceAvalanche ratedLead free terminal platingRoHS compliantHalogen freeSON 3.3-mm × 3.3-mm plastic package

Description

This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.