CSD19533KCS Series

100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case
Texas Instruments CSD19533KCS	Through Hole	2670 pF	10.5 mOhm	35 nC	TO-220-3	3.4 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	188 W	100 V	6 V 10 V	100 A	20 V	TO-220-3

Catalog

100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm

Key Features

• Ultra-low Qg and QgdLow thermal resistanceAvalanche ratedPb free terminal platingRoHS compliantHalogen freeTO-220 plastic packageUltra-low Qg and QgdLow thermal resistanceAvalanche ratedPb free terminal platingRoHS compliantHalogen freeTO-220 plastic package

Description

This 100V, 8.7mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 100V, 8.7mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.