CSD19535KTT Series

100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Texas Instruments CSD19535KTT	Surface Mount	7930 pF	300 W	98 nC	N-Channel	-55 °C	175 ░C	3.4 mOhm	3.4 V	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	TO-263 (DDPAK-3)	MOSFET (Metal Oxide)	20 V	6 V 10 V	200 A	100 V

Catalog

100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm

Key Features

• Ultra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeD2PAK Plastic PackageUltra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeD2PAK Plastic Package

Description

This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. ™ This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. ™