CSD22204W Series

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection

Catalog

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max) [Max]
Texas Instruments CSD22204W	5 A	9-DSBGA	MOSFET (Metal Oxide)	9.9 mOhm	P-Channel	8 V	Surface Mount	1130 pF	9-UFBGA DSBGA	1.7 W	24.6 nC	-55 °C	150 °C	2.5 V 4.5 V	950 mV	-6 V
Texas Instruments CSD22204WT	5 A	9-DSBGA	MOSFET (Metal Oxide)	9.9 mOhm	P-Channel	8 V	Surface Mount	1130 pF	9-UFBGA DSBGA	1.7 W	24.6 nC	-55 °C	150 °C	2.5 V 4.5 V	950 mV	-6 V

Catalog

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection

Key Features

• Low ResistanceSmall Footprint 1.5 mm × 1.5 mmPb FreeGate ESD ProtectionRoHS CompliantHalogen FreeGate-Source Voltage ClampLow ResistanceSmall Footprint 1.5 mm × 1.5 mmPb FreeGate ESD ProtectionRoHS CompliantHalogen FreeGate-Source Voltage Clamp

Description

This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.