CSD22206W Series

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection

Catalog

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Texas Instruments CSD22206WT	5.7 mOhm	-55 °C	150 °C	2.5 V 4.5 V	P-Channel	9-DSBGA	2275 pF	1.7 W	9-UFBGA DSBGA	-6 V	8 V	1.05 V	Surface Mount	MOSFET (Metal Oxide)	5 A	14.6 nC

Catalog

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection

Key Features

• Ultra-Low ResistanceSmall Footprint 1.5 mm × 1.5 mmLead FreeGate ESD ProtectionRoHS CompliantHalogen FreeGate-Source Voltage ClampUltra-Low ResistanceSmall Footprint 1.5 mm × 1.5 mmLead FreeGate ESD ProtectionRoHS CompliantHalogen FreeGate-Source Voltage Clamp

Description

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.