CSD22202W15 Series

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection

Catalog

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Texas Instruments CSD22202W15	1.5 W	8 V	1.1 V	9-DSBGA	1390 pF	10 A	12.2 mOhm	MOSFET (Metal Oxide)	9-UFBGA DSBGA	2.5 V 4.5 V	Surface Mount	-6 V	-55 °C	150 °C	P-Channel

Catalog

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection

Key Features

• Low ResistanceSmall Footprint 1.5 mm × 1.5 mmPb FreeGate ESD ProtectionRoHS CompliantHalogen FreeGate-Source Voltage ClampLow ResistanceSmall Footprint 1.5 mm × 1.5 mmPb FreeGate ESD ProtectionRoHS CompliantHalogen FreeGate-Source Voltage Clamp

Description

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.