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ON Semiconductor
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
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FDMA1028NZDual N-Channel PowerTrench<sup>®</sup> MOSFET 20V, 3.7A, 68mΩ | Transistors | 3 | Active | This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. |
FDMA1029PZDual P-Channel PowerTrench<sup>®</sup> MOSFET -20V, -3.1A, 95mΩ | Transistors | 1 | Active | This device is designed specifically as a single-package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET™ 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. |
FDMA1032CZ20V Complementary PowerTrench<sup>®</sup> MOSFET | FET, MOSFET Arrays | 1 | Active | This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications. |
FDMA2002NZDual N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 2.9A, 123mΩ | Discrete Semiconductor Products | 1 | Active | This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications. |
FDMA291PP-Channel PowerTrench<sup>®</sup> MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ | Discrete Semiconductor Products | 1 | Active | This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. |
FDMA3027PZDual P-Channel PowerTrench® MOSFET -30V , -3.3A, 87mΩ | FET, MOSFET Arrays | 1 | Active | This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S zener has been added to enhance ESD voltage level. |
FDMA410NZN-Channel PowerTrench<sup>®</sup> MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ | FETs, MOSFETs | 1 | Active | This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON)@ VGS= 1.5 V on special MicroFET leadframe. |
FDMA430NZSingle N-Channel 2.5V Specified PowerTrench<sup>®</sup> MOSFET 30V, 5.0A, 40mΩ | Discrete Semiconductor Products | 1 | Active | This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on)@VGS=2.5V on special MicroFET leadframe. |
FDMA507PZP-Channel PowerTrench<sup>®</sup> MOSFET -20V, -7.8A, 24mΩ | FETs, MOSFETs | 1 | Active | This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance. The MicroFET 2X2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications. |
FDMA520PZP-Channel PowerTrench<sup>®</sup> MOSFET -20V, -7.3A, 30mΩ | Transistors | 1 | Obsolete | This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance.The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. |
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |