Beta

⌘K

O

ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

...

Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FDMB2307NZDual Common Drain N-Channel PowerTrench<sup>®</sup> MOSFET 20V , 9.7A, 16.5mΩ	Transistors	1	Obsolete	This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on ON Semiconductor’s advanced PowerTrench® process with state of the art MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and rS1S2(on).
FDMB2308PZDual Common Drain P-Channel PowerTrench<sup>®</sup> MOSFET -20V, -7A, 36mΩ	FETs, MOSFETs	1	Obsolete	This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on ON Semiconductor’s advanced PowerTrench®process with state of the art MircoFET Leadframe, the FDMB2308PZ minimizes both PCB space and rS1S2(on).
FDMC007N08LCN-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 80V, 66A, 7.0mΩ	FET, MOSFET Arrays	2	Active	This device includes two specialized N-Channel MOSFETs in a dual power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
FDMC012N03N-Channel Power Trench<sup>®</sup> MOSFET 30 V, 1.23 mΩ	Transistors	1	Active	This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMC02	Transistors	2	Active
FDMC0310ASN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 21A, 4.4mΩ	Single	2	Active	The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.
FDMC2512SDCN-Channel Dual Cool<sup>TM</sup> 33 PowerTrench<sup>®</sup> SyncFET<sup>TM</sup> 25V, 40A, 2.0mΩ	Transistors	2	Obsolete	This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMC2523PP-Channel QFET<sup>®</sup> MOSFET -150V, -3A, 1.5Ω	Discrete Semiconductor Products	1	Active	These P-Channel MOSFET enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FDMC2610N-Channel UltraFET Trench<sup>®</sup> MOSFET 200V, 9.5A, 200mΩ	FETs, MOSFETs	1	Active	This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications.
FDMC2D8N025SN-Channel PowerTrench<sup>®</sup> SyncFET<sup>TM</sup> 25V, 124A, 1.9mΩ	Transistors	1	Obsolete	The FDMC2D8N025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.