FDMA1028NZ Series

Dual N-Channel PowerTrench® MOSFET 20V, 3.7A, 68mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET 20V, 3.7A, 68mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power - Max [Max]	Supplier Device Package	FET Feature	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Configuration	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMA1028NZ-F021	6 nC	6-VDFN Exposed Pad	20 V	340 pF	MOSFET (Metal Oxide)	700 mW	6-MicroFET (2x2)	Logic Level Gate	68 mOhm	1.5 V	2 N-Channel (Dual)	3.7 A	Surface Mount	-55 °C	150 °C
ON Semiconductor FDMA1028NZ	6 nC	6-VDFN Exposed Pad	20 V	340 pF	MOSFET (Metal Oxide)	700 mW	6-MicroFET (2x2)	Logic Level Gate	68 mOhm	1.5 V	2 N-Channel (Dual)	3.7 A	Surface Mount	-55 °C	150 °C
ON Semiconductor FDMA1028NZ	6 nC	6-VDFN Exposed Pad	20 V	340 pF	MOSFET (Metal Oxide)	700 mW	6-MicroFET (2x2)	Logic Level Gate	68 mOhm	1.5 V	2 N-Channel (Dual)	3.7 A	Surface Mount	-55 °C	150 °C

Catalog

Dual N-Channel PowerTrench® MOSFET 20V, 3.7A, 68mΩ

Key Features

• 3.7 A, 20VRDS(ON)= 68 mΩ @ VGS= 4.5VRDS(ON)= 86 mΩ @ VGS= 2.5V

• Low profile – 0.8 mm maximum – in the new packageMicroFET 2x2 mm

• HBM ESD protection level > 2kV (Note 3)

• RoHS Compliant

• Free from halogenated compounds and antimonyoxides

Description

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.