FDMA1029PZ Series

Dual P-Channel PowerTrench® MOSFET -20V, -3.1A, 95mΩ

Catalog

Dual P-Channel PowerTrench® MOSFET -20V, -3.1A, 95mΩ

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power - Max [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMA1029PZ	95 mOhm	10 nC	2 P-Channel	6-WDFN (2x2)	1.5 V	3.1 A	20 V	Logic Level Gate	-55 °C	150 °C	Surface Mount	700 mW	MOSFET (Metal Oxide)	540 pF

Catalog

Dual P-Channel PowerTrench® MOSFET -20V, -3.1A, 95mΩ

Key Features

-3.1 A, -20V

• RDS(ON)= 95 mΩ @ VGS= -4.5V

• RDS(ON)= 141 mΩ @ VGS= -2.5V

• Low profile ?0.8 mm maximum ?in the new packageMicroFET 2x2 mm

• HBM ESD protection level > 2.5kV(see datasheet Note 3)

• RoHS Compliant

• Free from halogenated compounds and antimony oxides

Description

This device is designed specifically as a single-package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET™ 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.