FDMA410NZ Series

N-Channel PowerTrench® MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ

Catalog

N-Channel PowerTrench® MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMA410NZ	8 V	14 nC	N-Channel	20 V	Surface Mount	-55 °C	150 °C	1.5 V 4.5 V	6-MicroFET (2x2)	1 V	MOSFET (Metal Oxide)	9.5 A	23 mOhm	2.4 W	1080 pF

Catalog

N-Channel PowerTrench® MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ

Key Features

• Max rDS(on)= 23 mΩ at VGS= 4.5 V, ID= 9.5 A

• Max rDS(on)= 29 mΩ at VGS= 2.5 V, ID= 8.0 A

• Max rDS(on)= 36 mΩ at VGS= 1.8 V, ID= 4.0 A

• Max rDS(on)= 50 mΩ at VGS= 1.5 V, ID= 2.0 A

• HBM ESD protection level > 2.5 kV (Note 3)

• Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm

• Free from halogenated compounds and antimony oxides

• RoHS Compliant

Description

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON)@ VGS= 1.5 V on special MicroFET leadframe.