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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FDMA530PZP-Channel PowerTrench<sup>®</sup> MOSFET-30V, -6.8A, 35mΩ	FETs, MOSFETs	1	Active	This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance.The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
FDMA6023PZTDual P-Channel PowerTrench<sup>®</sup> MOSFET -20V, -3.6A, 60mΩ	FET, MOSFET Arrays	2	Active	This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.
FDMA6676PZSingle P-Channel PowerTrench<sup>®</sup> MOSFET -30V, -11A, 13.5mΩ	Discrete Semiconductor Products	1	Obsolete	This device is an ultra low resistance P-Channel FET. It is designed for power line load switching applications and reverse polarity protection. It is especially optimized for voltage rails that can climb as high as 25V. Typical end systems include laptop computers, tablets and mobile phone. Applications include battery protection, input power line protection and charge path protection, including USB and other charge paths. The FDMA6676PZ has an enhanced VGS rating of 25V specifically designed to simplify installation. When used as reverse polarity protection, with gate tied to ground and drain tied to V input, it is designed to support operating input voltages that can raise as high as 25V without the need for external Zener protection on the gate. Its small 2x2x0.8 form factor make it an ideal part for mobile and space constrained applications.
FDMA7628Single N-Channel 1.5 V Specified PowerTrench<sup>®</sup> MOSFET 20V, 9.4A, 14.5mΩ	FETs, MOSFETs	1	Active	This Single N-Channel MOSFET has been designed using ON Semiconductor Semiconductor's advanced Power Trench®process to optimize the rDS(ON)@ VGS= 1.5 V on special MicroFET leadframe.
FDMA7632N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 11A, 15mΩ	Single FETs, MOSFETs	3	Active	This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
FDMA8051LSingle N-Channel PowerTrench<sup>®</sup> MOSFET 40V, 10A, 14mΩ	FETs, MOSFETs	1	Active	This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on)and gate charge provide excellent switching performance.
FDMA86108LZSingle N-Channel PowerTrench<sup>®</sup> MOSFET 100V, 2.2A, 243mΩ	FETs, MOSFETs	1	Active	This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on)and gate charge provide excellent switching performance.
FDMA8878Single N-Channel Power Trench<sup>®</sup> MOSFET 30V, 9.0A, 16mΩ	Discrete Semiconductor Products	1	Active	This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on), switching performance.
FDMA90	Discrete Semiconductor Products	1	Obsolete
FDMA910PZP-Channel PowerTrench® MOSFET -20V, -9.4A, 20mΩ	Transistors	1	Active	This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.