FDMA430NZ Series

Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40mΩ

Catalog

Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40mΩ

Part	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package
ON Semiconductor FDMA430NZ	12 V	Surface Mount	5 A	11 nC	1.5 V	2.4 W	800 pF	40 mOhm	N-Channel	30 V	2.5 V 4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	6-MicroFET (2x2)

Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40mΩ

• RDS(on)= 40mΩ @ VGS= 4.5 V, ID= 5.0A

• RDS(on)= 50mΩ@ VGS= 2.5 V, ID= 4.5A

• Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm

• HBM ESD protection level > 2.5k V typical (Note 3)

• Free from halogenated compounds and antimony oxides

• RoHS Compliant

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on)@VGS=2.5V on special MicroFET leadframe.