FDMA2002NZ Series

Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Configuration	Supplier Device Package	Power - Max [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
ON Semiconductor FDMA2002NZ	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual)	6-MicroFET (2x2)	650 mW	1.5 V	2.9 A	123 mOhm	3 nC	Logic Level Gate	220 pF	6-VDFN Exposed Pad

Catalog

Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ

Key Features

• 2.9 A, 30 V

• RDS(ON)= 123 mΩ @ VGS= 4.5 V

• RDS(ON)= 140 mΩ @ VGS= 3.0 V

• RDS(ON)= 163 mΩ @ VGS= 2.5 V

• Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

• HBM ESD protection level=1.8kV (Note 3)

• RoHS Compliant

• Free from halogenated compounds and antimonyoxides

Description

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.