FDMA291P Series

P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ

Catalog

P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ

Part	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDMA291P	42 mOhm	P-Channel	2.4 W	-55 °C	150 °C	20 V	1 V	1000 pF	MOSFET (Metal Oxide)	6-MicroFET (2x2)	1.8 V 4.5 V	6.6 A	Surface Mount	8 V	14 nC

Catalog

P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ

Key Features

-6.6 A, -20 V

• RDS(ON)= 42 mΩ @ VGS= -4.5 V

• RDS(ON)= 58 mΩ @ VGS= -2.5 V

• RDS(ON)= 98 mΩ @ VGS= -1.8 V

• Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

• Free from halogenated compounds and antimonyoxides

• RoHS Compliant

Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.