FDMA520PZ Series

P-Channel PowerTrench® MOSFET -20V, -7.3A, 30mΩ

Catalog

P-Channel PowerTrench® MOSFET -20V, -7.3A, 30mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Technology
ON Semiconductor FDMA520PZ	7.3 A	-55 °C	150 °C	12 V	20 nC	1645 pF	30 mOhm	2.5 V 4.5 V	1.5 V	6-MicroFET (2x2)	Surface Mount	20 V	2.4 W	P-Channel	MOSFET (Metal Oxide)

Catalog

P-Channel PowerTrench® MOSFET -20V, -7.3A, 30mΩ

Key Features

• Max rDS(on)= 30mΩ at VGS= -4.5V, ID= -7.3A

• Max rDS(on)= 53mΩ at VGS= -2.5V, ID= -5.5A

• Low profile–0.8mm maximum–in the new package MicroFET 2X2 mm

• HBM ESD protection level > 3k V typical (Note 3)

• Free from halogenated compounds and antimony oxides

• RoHS compliant

Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance.The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.