FDMA1032CZ Series

20V Complementary PowerTrench® MOSFET

Catalog

20V Complementary PowerTrench® MOSFET

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Configuration	Technology	Supplier Device Package	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]
ON Semiconductor FDMA1032CZ	68 mOhm	20 V	3.1 A 3.7 A	Surface Mount	6-VDFN Exposed Pad	-55 °C	150 °C	6 nC	1.5 V	N and P-Channel	MOSFET (Metal Oxide)	6-MicroFET (2x2)	Logic Level Gate	340 pF	700 mW

Catalog

20V Complementary PowerTrench® MOSFET

Key Features

• Q1: N-Channel3.7 A, 20VRDS(ON)= 68 mΩ @ VGS= 4.5VRDS(ON)= 86 mΩ @ VGS= 2.5V

• Q2: P-Channel–3.1 A, –20VRDS(ON)= 95 mΩ @ VGS= –4.5VRDS(ON)= 141 mΩ @ VGS= –2.5V

• Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm

• HBM ESD protection level > 2 kV (Note 3)

• RoHS Compliant

• Free from halogenated compounds and antimony oxides

Description

This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications.