FDMA507PZ Series

P-Channel PowerTrench® MOSFET -20V, -7.8A, 24mΩ

Catalog

P-Channel PowerTrench® MOSFET -20V, -7.8A, 24mΩ

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDMA507PZ	P-Channel	1.8 V 4.5 V	2015 pF	7.8 A	1.5 V	Surface Mount	8 V	2.4 W	6-MicroFET (2x2)	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	24 mOhm	42 nC

Catalog

P-Channel PowerTrench® MOSFET -20V, -7.8A, 24mΩ

Key Features

• Max rDS(on)= 24 mΩ at VGS= -5 V, ID= -7.8 A

• Max rDS(on)= 25 mΩ at VGS= -4.5 V, ID= -7 A

• Max rDS(on)= 35 mΩ at VGS= -2.5 V, ID= -5.5 A

• Max rDS(on)= 45 mΩ at VGS= -1.8 V, ID= -4 A

• Low Profile - 0.8 mm maximum - in the package MicroFET2X2 mm

• HBM ESD protection level > 3.2K V typical (Note3)

• Free from halogenated compounds and antimony oxides

• RoHS Compliant

Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance. The MicroFET 2X2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications.