FDMA3027PZ Series

Dual P-Channel PowerTrench® MOSFET -30V , -3.3A, 87mΩ

Catalog

Dual P-Channel PowerTrench® MOSFET -30V , -3.3A, 87mΩ

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power - Max [Max]	Supplier Device Package
ON Semiconductor FDMA3027PZ-F130	6-VDFN Exposed Pad	-55 °C	150 °C	Surface Mount	700 mW	6-MicroFET (2x2)

Catalog

Dual P-Channel PowerTrench® MOSFET -30V , -3.3A, 87mΩ

Key Features

• Max rDS(on)= 87 mΩ at VGS= -10 V, ID= -3.3 A

• Max rDS(on)= 152 mΩ at VGS= -4.5 V, ID= -2.3 A

• HBM ESD protection level > 2 KV typical (Note 3)

• Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm

• RoHS Compliant

Description

This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S zener has been added to enhance ESD voltage level.