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Rohm Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Rohm Semiconductor | Optoelectronics | LED GREEN CLEAR T-1 T/H |
Rohm Semiconductor MCR10EZPF8252Unknown | Resistors | RES SMD 82.5K OHM 1% 1/8W 0805 |
Rohm Semiconductor | Resistors | RES SMD 33K OHM 5% 1/4W 1206 |
Rohm Semiconductor | Resistors | RES 910K OHM 5% 1/4W 0603 |
Rohm Semiconductor MCR03EZPFX2260Unknown | Resistors | RES SMD 226 OHM 1% 1/10W 0603 |
Rohm Semiconductor ESR10EZPF4121NRND | Resistors | RES 4.12K OHM 1% 2/5W 0805 |
Rohm Semiconductor MCR25JZHFLR270Unknown | Resistors | RES 0.27 OHM 1% 1/2W 1210 |
Rohm Semiconductor ESR10EZPF4R32NRND | Resistors | RES 4.32 OHM 1% 1/2W 0805 |
Rohm Semiconductor MCR18EZPJ1R6Unknown | Resistors | RES SMD 1.6 OHM 5% 1/4W 1206 |
Rohm Semiconductor | Resistors | RES, 240K, 1%, 0.25W, THICK FILM, 0603 ROHS COMPLIANT: YES |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
SCT3080ALHR650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | Single FETs, MOSFETs | 1 | Active | AEC-Q101 qualified automotive grade product. SCT3080ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT3080KL1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | Transistors | 1 | Active | SCT3080KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT3080KLHR1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | Discrete Semiconductor Products | 1 | Active | AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT31051200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | Single FETs, MOSFETs | 5 | Active | SCT3105KR is anSiC MOSFETthat features a trench gate structure optimized forelectric vehicle charging stations,solar power inverters, and server power supplies requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs. |
SCT3105KL1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | FETs, MOSFETs | 1 | Active | SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives. |
SCT3120650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | Discrete Semiconductor Products | 2 | Active | SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT3120ALHR650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | Single FETs, MOSFETs | 1 | Active | AEC-Q101 qualified automotive grade product. SCT3120ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT31601200V 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET | FETs, MOSFETs | 2 | Active | SCT3160KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT3160KL1200V, 17A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET | Single FETs, MOSFETs | 1 | Active | SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |
SCT3160KW7HR1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | Transistors | 1 | Active | AEC-Q101 qualified automotive grade product. SCT3160KW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. |