Beta

⌘K

R

Rohm Semiconductor

Series List(8390)

...

...

Series	Category	# Parts	Status	Description

Standalone parts(17468)

...

Part	Category	Description
Rohm Semiconductor SLR-322MCT32	Optoelectronics	LED GREEN CLEAR T-1 T/H
Rohm Semiconductor MCR10EZPF8252Unknown	Resistors	RES SMD 82.5K OHM 1% 1/8W 0805
Rohm Semiconductor KTR18EZPJ333	Resistors	RES SMD 33K OHM 5% 1/4W 1206
Rohm Semiconductor ESR03EZPJ914	Resistors	RES 910K OHM 5% 1/4W 0603
Rohm Semiconductor MCR03EZPFX2260Unknown	Resistors	RES SMD 226 OHM 1% 1/10W 0603
Rohm Semiconductor ESR10EZPF4121NRND	Resistors	RES 4.12K OHM 1% 2/5W 0805
Rohm Semiconductor MCR25JZHFLR270Unknown	Resistors	RES 0.27 OHM 1% 1/2W 1210
Rohm Semiconductor ESR10EZPF4R32NRND	Resistors	RES 4.32 OHM 1% 1/2W 0805
Rohm Semiconductor MCR18EZPJ1R6Unknown	Resistors	RES SMD 1.6 OHM 5% 1/4W 1206
Rohm Semiconductor ESR03EZPF2403	Resistors	RES, 240K, 1%, 0.25W, THICK FILM, 0603 ROHS COMPLIANT: YES

Series	Category	# Parts	Status	Description

SCT4026DEHR750V, 56A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT4026DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4026DRHR750V, 56A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Discrete Semiconductor Products	1	Active	AEC-Q101 qualified automotive grade product. SCT4026DRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4026DW7750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	Transistors	1	Active	SCT4026DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4026DW7HR750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Transistors	1	Active	AEC-Q101 qualified automotive grade product. SCT4026DW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4026DWA750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	Single FETs, MOSFETs	1	Active	SCT4026DWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4026DWAHR750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Single FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT4026DWAHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT40361200V, 36mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET	Transistors	2	Active	SCT4036KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4036KEHR1200V, 43A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT4036KEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4036KRHR1200V, 43A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	FETs, MOSFETs	1	Active	AEC-Q101 qualified automotive grade product. SCT4036KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4036KW71200V, 40A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	FETs, MOSFETs	1	Active	SCT4036KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.