SCT3120ALHR Series

650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Grade	Mounting Type	Supplier Device Package	Package / Case	Qualification	Drain to Source Voltage (Vdss)	FET Type
Rohm Semiconductor SCT3120ALHRC11	21 A	5.6 V	156 mOhm	38 nC	18 V	175 °C	460 pF	103 W	Automotive	Through Hole	TO-247N	TO-247-3	AEC-Q101	650 V	N-Channel

Catalog

650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Description

AEC-Q101 qualified automotive grade product. SCT3120ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.