1200V 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
1200V 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
1200V 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
| Part | Power Dissipation (Max) [Max] | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 100 W | 175 °C | 42 nC | Surface Mount | TO-263-7 | N-Channel | 208 mOhm | 5.6 V | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | 398 pF | 17 A | 1.2 kV | |||
 Rohm Semiconductor | 103 W | 175 °C | 42 nC | Through Hole | TO-247N | N-Channel | 208 mOhm | 5.6 V | TO-247-3 | 398 pF | 17 A | 1.2 kV | 18 V | Automotive | AEC-Q101 |