SCT3120 Series
650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Manufacturer: Rohm Semiconductor
Catalog
650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 650 V | 5.6 V | 100 W | 460 pF | 175 °C | 21 A | Surface Mount | 38 nC | 156 mOhm | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | TO-263-7 | N-Channel | ||
 Rohm Semiconductor | 650 V | 5.6 V | 460 pF | 175 °C | 21 A | Through Hole | 38 nC | 156 mOhm | TO-247-3 | TO-247N | N-Channel | 18 V | 103 W |
Description
AI
SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.