SCT3080KLHR Series

1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Grade	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max) [Max]	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Rohm Semiconductor SCT3080KLHRC11	104 mOhm	1.2 kV	TO-247N	5.6 V	TO-247-3	Automotive	60 nC	175 °C	18 V	N-Channel	165 W	AEC-Q101	785 pF	31 A	Through Hole

Catalog

1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Description

AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.