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Rohm Semiconductor

Series List(8390)

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Series	Category	# Parts	Status	Description

Standalone parts(17468)

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Part	Category	Description
Rohm Semiconductor SLR-322MCT32	Optoelectronics	LED GREEN CLEAR T-1 T/H
Rohm Semiconductor MCR10EZPF8252Unknown	Resistors	RES SMD 82.5K OHM 1% 1/8W 0805
Rohm Semiconductor KTR18EZPJ333	Resistors	RES SMD 33K OHM 5% 1/4W 1206
Rohm Semiconductor ESR03EZPJ914	Resistors	RES 910K OHM 5% 1/4W 0603
Rohm Semiconductor MCR03EZPFX2260Unknown	Resistors	RES SMD 226 OHM 1% 1/10W 0603
Rohm Semiconductor ESR10EZPF4121NRND	Resistors	RES 4.12K OHM 1% 2/5W 0805
Rohm Semiconductor MCR25JZHFLR270Unknown	Resistors	RES 0.27 OHM 1% 1/2W 1210
Rohm Semiconductor ESR10EZPF4R32NRND	Resistors	RES 4.32 OHM 1% 1/2W 0805
Rohm Semiconductor MCR18EZPJ1R6Unknown	Resistors	RES SMD 1.6 OHM 5% 1/4W 1206
Rohm Semiconductor ESR03EZPF2403	Resistors	RES, 240K, 1%, 0.25W, THICK FILM, 0603 ROHS COMPLIANT: YES

Series	Category	# Parts	Status	Description

SCT3160KWA1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	FETs, MOSFETs	1	Active	SCT3160KWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3160KWAHR1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive	Transistors	1	Active	AEC-Q101 qualified automotive grade product. SCT3160KWAHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT4013750V, 13mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET	Transistors	1	Active	SCT4013DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4013DE750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET	FETs, MOSFETs	1	Active	SCT4013DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4013DW7750V, 98A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	Transistors	1	Active	SCT4013DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4018	Transistors	3	Active
SCT4018KE1200V, 81A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET	Discrete Semiconductor Products	1	Active	SCT4018KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4018KW71200V, 75A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	FETs, MOSFETs	1	Active	SCT4018KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4018KWA1200V, 75A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET	Discrete Semiconductor Products	1	Active	SCT4018KWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
SCT4026750V, 26mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET	FETs, MOSFETs	2	Active	SCT4026DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.