SCT3105KL Series

1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature
Rohm Semiconductor SCT3105KLGC11	TO-247-3	TO-247N	24 A	18 V	5.6 V	N-Channel	574 pF	Through Hole	51 nC	1.2 kV	137 mOhm	134 W	175 °C

Catalog

1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Description

SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.